@Article{UedaReutLepi:2005:CoNiIo,
author = "Ueda, Mario and Reuther, H and Lepienski, C. M.",
affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio
Associado de Plasmas, (INPE, LAP)",
title = "Comparison of nitrogen ion beam and plasma immersion implantation
in Al5052 alloy",
journal = "Nuclear Instruments and Methods in Physics Research Section B:
Beam Interactions with Materials and Atoms",
year = "2005",
volume = "240",
pages = "199–203",
keywords = "Nitrogen ion implantation, Al5052 alloy, Ion beam, Plasma
immersion ion implantation.",
abstract = "Experiments comparing nitrogen ion implantations in Al5052 by beam
and plasma immersion were carried out. Beam implantation (BI) was
carried out using a 100 keV, high current beam implanter while the
plasma immersion ion implantation (PIII) was obtained using a glow
discharge plasma source coupled to a pulsed high voltage supply. A
nitrogen BI dose of 5 · 1017 cm2 at 100 keV was attained with near
Gaussian implantation profile while the PIII was performed until
we reached similar doses with a maximum energy of 15 keV.
Implantation profiles were obtained by Auger electron spectroscopy
(AES). X-ray diffraction (XRD) indicated the formation of AlN in
both cases but it was more clearly demonstrated by high resolution
AES. For BI treatment, a buried AlN layer was achieved while for
PIII, a layer of AlNxOy close to the surface was seen. Due to the
high temperature reached in the PIII processing (400 C), a
softening of the Al5052 bulkresulted while for BI processed
samples with <200 C an increase in hardness was observed.",
doi = "10.1016/j.nimb.2005.06.115",
url = "http://dx.doi.org/10.1016/j.nimb.2005.06.115",
issn = "0168-583X and 0167-5087",
language = "en",
targetfile = "1-s2.0-S0168583X05010682-main.pdf",
urlaccessdate = "28 abr. 2024"
}